High-breakdown-voltage insulated gate semiconductor device

Details High-breakdown-voltage insulated gate semiconductor device High-breakdown-voltage insulated gate semiconductor device

2008-06-03

2008-06-03

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S628000, C257SE29104

Reexamination Certificate

active

07381993

ABSTRACT:
In a semiconductor device of the present invention, the top surface of an n-type silicon carbide layer formed on a silicon carbide substrate is miscut from the (0001) plane in the <11-20> direction. A gate electrode, a source electrode and other elements are arranged such that in a channel region, the dominating current flows along a miscut direction. In the present invention, a gate insulating film is formed and then heat treatment is performed in an atmosphere containing a group-V element. In this way, the interface state density at the interface between the silicon carbide layer and the gate insulating film is reduced. As a result, the electron mobility becomes higher in a miscut direction A than in the direction perpendicular to the miscut direction A.

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