High-breakdown voltage field-effect transistor

Details High-breakdown voltage field-effect transistor High-breakdown voltage field-effect transistor

1992-08-12

1994-06-28

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257272, 257280, 257282, 257285, 257286, H01L 2980, H01L 29167, H01L 29161

Patent

active

053249690

ABSTRACT:
A field-effect transistor including a first channel layer, formed in contacting relationship with a gate electrode, and a second channel layer, formed on one side or both sides of the first channel layer in non-contacting relationship with the gate electrode, the carrier concentration in the second channel layer being higher than that in the first channel layer but lower than that in high-impurity concentration active layers forming drain and source regions. The field-effect transistor employs an offset gate configuration in which the gate electrode is formed in contacting relationship with the first channel layer at a position nearer to the high-impurity concentration active layer forming the source region than to the high-impurity concentration active layer forming the drain region. A dummy gate is formed and ion implantation is performed from two different angles using the dummy gate as a mask, thereby efficiently forming the source region, drain region, and second channel layer in a sequence of successive processing steps. By combining the suitably patterned first and second ion shielding layers, the gate to source electrode spacing and the gate to drain electrode spacing are controlled by the accuracy to which the second ion shielding layer can be formed.

REFERENCES:
patent: 4636822 (1987-01-01), Codella et al.

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