Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1995-10-31
1997-07-15
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257192, 257412, H01L 310328, H01L 2980, H01L 2976
Patent
active
056486685
ABSTRACT:
A semiconductor device includes a drain electrode, a source electrode, and a gate electrode on a semiconductor substrate; a semiconductor layer on a region of the semiconductor substrate and including a first dopant concentration region on which the gate electrode is centrally disposed; a second dopant concentration region more heavily doped than the first dopant concentration region, disposed adjacent the first dopant concentration region and having a length toward the drain electrode; third dopant concentration regions, more heavily doped than the second dopant concentration region, respectively disposed adjacent the second dopant concentration region at drain side and adjacent the first dopant concentration region at the source side; a drain electrode disposed on one of the third dopant concentration regions; and a source electrode disposed on the other of the third dopant concentration regions. Even when the second dopant concentration region is etched while producing a sidewall in producing the semiconductor device, the depth of the surface depletion layer on the etched part is shallow so that channel confinement is relaxed. In addition, even when an electric field is concentrated toward the drain side of the first dopant concentration region, the electric field at the third dopant concentration region is relaxed.
REFERENCES:
patent: 5324969 (1994-06-01), Murai et al.
patent: 5351128 (1994-09-01), Goto et al.
Kuwata et al. "High Breakdown Voltage MESFET With Planar Gate Structure For Low Distortion Power Applications", IEEE GaAs IC Symposium, 1993, pp. 181-184.
Fahmy Wael
Mitsubishi Denki & Kabushiki Kaisha
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