Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With means to increase breakdown voltage
Reexamination Certificate
2011-01-04
2011-01-04
Sarkar, Asok K (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With means to increase breakdown voltage
C257S129000, C257S272000, C257SE29008
Reexamination Certificate
active
07863645
ABSTRACT:
A double-gate semiconductor device provides a high breakdown voltage allowing for a large excursion of the output voltage that is useful for power applications. The double-gate semiconductor device may be considered a double-gate device including a MOS gate and a junction gate, in which the bias of the junction gate may be a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages of the MOS gate and the junction gate. Because an individual junction gate has an intrinsically high breakdown voltage, the breakdown voltage of the double-gate semiconductor device is greater than the breakdown voltage of an individual MOS gate. The double-gate semiconductor device provides improved RF capability in addition to operability at higher power levels as compared to conventional transistor devices. The double-gate semiconductor device may also be fabricated in a higher spatial density configuration such that a common implantation between the MOS gate and the junction gate is eliminated.
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Barroul Patrice J.
Bracale Alexandre G.
Huin Francis C.
Masliah Denis A.
ACCO Semiconductor Inc.
Peters Verny LLP
Sarkar Asok K
Slutsker Julia
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