Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1991-11-27
1994-10-11
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257552, 257556, 257557, 257558, 257563, 257565, 257575, 257576, H01L 2972, H01L 2702, H01L 2704
Patent
active
053550153
ABSTRACT:
A lateral pnp transistor for use in programmable logic arrays. The lateral pnp has a layer of oxide disposed between a polysilicon layer and the base along the base width. The oxide layer prevents diffusion of the N+ dopant contained in the polysilicon layer into the N- base region. The base region thus remains N- and the resulting transistor has improved breakdown voltage characteristics while retaining the speed advantages of polysilicon contact layers. The lateral pnp transistor is manufactured by a method which requires minimal deviation from other methods used to manufacture lateral pnp transistors.
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patent: 5027184 (1991-06-01), Soclof
Bhattacharyya et al., "Dual Base Lateral Bipolar Transistor", IBM Technical Disclosure Bulletin, vol. 20 No. 4, Sep. 1977.
Wieder, "Processing for a Lateral PNP Transistor in the Submicron Range", IBM Technical Disclosure Bulletin, vol. 21 No. 10, Mar. 1979.
IBM Corp. Technical Disclosure Bulletin, "Enclosed Lateral PNP Transistor", vol. 29 No. 3, Aug. 1986.
Marazita Frank
McFarlane Brian
Readdie John E.
James Andrew J.
Martin Valencia M.
National Semiconductor Corporation
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