High blocking-capacity semiconductor component

Details High blocking-capacity semiconductor component High blocking-capacity semiconductor component

1990-03-08

1991-05-21

Hille, Rolf

357 39, H01L 2974, H01L 29747

Patent

active

050179926

ABSTRACT:
In the case of a high blocking-capacity semiconductor component with an anode structure, which provides between the n-type base layer (6) and the anode-side p-type emitter regions (8) an n-doped barrier layer (7), and between the p-type emitter regions (8) emitter short-circuits with short-circuit contact regions (9), by partitioning of the barrier layer (7) into local barrier-layer regions (7a,b) an easily adjustable and simultaneously increased short-circuit resistance (R.sub.s) in the short-circuit path is obtained.

REFERENCES:
"6000 V Gate Turn-Off Thyristor with n-Buffer and Anode Short Short Structure", 19th Conference on Solid State Device and Materials, Tokyo 1987, T. Ogura et al.

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