High band-gap opto-electronic device

Details High band-gap opto-electronic device High band-gap opto-electronic device

1989-01-19

1991-10-22

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 4, 357 16, 357 90, 357 30, 372 43, 372 45, H01L 3300

Patent

active

050600281

ABSTRACT:
A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of growing the device section directly on the GaAs substrate, a layer of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-7 P, graded in x and in temperature while maintaining substantially y=0.5, is grown as a transitional layer. The high band-gap device structures include homojunctions, heterojunctions and particularly a separate confinement quantum well heterostructures. Various embodiments of the invention include devices on absorbing substrates and on transparent substrates, and devices incorporating strained-layer superlattices.

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