High band gap II-VI and III-V tunneling junctions for silicon mu

Details High band gap II-VI and III-V tunneling junctions for silicon mu High band gap II-VI and III-V tunneling junctions for silicon mu

1985-12-17

1986-12-23

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

H01L 3106, H01L 2714

Patent

active

046313524

ABSTRACT:
A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series, where the tunnel junction is comprised of p.sup.+ and n.sup.+ layers of high band-gap III-V or II-VI semiconductor materials that match the lattice structure of silicon, such as GaP (band-gap 2.24 eV) or ZnS (band-gap 3.6 eV), each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

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P. D. Sparks et al., Conference Record, 17th IEEE Photovolatic Specialists Conference (1984), pp. 726-728.
M. S. Bae, R. V. D'Aiello, "P.sup.+ /N High-Efficiency Silicon Solar Cells", Applied Physics Letters, vol. 31, No. 4, 15 Aug. 1977, pp. 285-287.

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