High aspect ratio via etch

Details High aspect ratio via etch High aspect ratio via etch

2007-07-24

2010-10-05

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S719000, C430S314000

Reexamination Certificate

active

07807583

ABSTRACT:
A method for patterning high aspect ratio vias is provided. More specifically a dry etching method is provided for patterning deep vias or vias with high aspects ratios thereby eliminating the hard mask undercut. A method is provided to create (pattern) deep vias in a substrate for use in three dimensional stacked semiconductor devices and/or structures. More specifically, a method is provided for patterning deep vias with an aspect ratio up to 10 into a Si substrate with smooth via sidewalls and sufficient slope to enable metallization.

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