High aspect ratio probes with self-aligned control electrodes

Details High aspect ratio probes with self-aligned control electrodes High aspect ratio probes with self-aligned control electrodes

1995-12-15

1998-12-01

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

313336, H01L 2906

Patent

active

058442510

ABSTRACT:
A high aspect ratio field emission or tunnelling probe is fabricated utilizing a single crystal reactive etching and metallization process. The resulting field emission probes have self-aligned single crystal silicon sharp tips, high aspect ratio supporting posts for the tips, and integrated, self-aligned gate electrodes surrounding an electrically isolated from the tips. The gate electrodes are spaced from the tips by between 200 and 800 nm and metal silicide or metal can be applied on the tips to achieve emitter turn on at low operational gate voltages. The resulting tips have a high aspect ratio for use in probing various surface phenomena, and for this purpose, the probes can be mounted on or integrated in a three-dimensional translator for mechanical scanning across the surface and for focusing by adjusting the height of the emitter above the surface.

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