High aspect ratio P-N junctions by the thermal gradient zone mel

Details High aspect ratio P-N junctions by the thermal gradient zone mel High aspect ratio P-N junctions by the thermal gradient zone mel

1975-05-16

1977-06-14

Wojciechowicz, Edward J.

357 55, 357 60, 357 88, 357 89, 357 90, H01L 2906, H01L 2904

Patent

active

040301168

ABSTRACT:
A thermal gradient zone melting technique is employed to migrate an array of metal buttons through a body of semiconductor material to form high aspect ratio P-N junctions therein. Semiconductor devices embodying such P-N junctions are suitable for employment in X-ray and infrared detection and imaging. Each button preferably has the configuration of an equilateral triangle and the array preferably has a hexagonal configuration.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann

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