High area capacitor formation using material dependent etching

Details High area capacitor formation using material dependent etching High area capacitor formation using material dependent etching

1991-10-31

1992-10-13

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

357 236, 437 52, H01L 2968, H01L 2176, H01G 406

Patent

active

051556570

ABSTRACT:
The invention provides a capacitor having increased capacitance comprising one or more main vertical trenches and one or more lateral trenches extending off the main vertical trench. The capacitor has alternating first and second regions, preferably silicon and non-silicon regions (for example, alternating silicon and germanium or alternating silicon and carbon regions). The etch characteristics of the alternating regions are utilized to selectively etch lateral trenches thereby increasing the surface area and capacitance of the capacitor. A method of fabricating the capacitors is also provided.

REFERENCES:
patent: 4475982 (1984-10-01), Lai et al.
patent: 4601778 (1986-07-01), Robb
patent: 4853348 (1989-08-01), Tsubouchi et al.
patent: 4906590 (1990-03-01), Kanetaki et al.
patent: 4943344 (1990-07-01), Tachi et al.
patent: 5095346 (1992-03-01), Bae et al.
patent: 5102817 (1992-04-01), Chatterjee et al.
P. M. Schaible and G. C. Schwartz, IBM Technical Disclosure Bulletin, vol. 22, No. 5, p. 1819 (Oct. 1979).
P. M. Schaible and G. C. Schwartz, IBM Technical Disclosure Bulletin, vol. 21, No. 7, pp. 2814-2815 (Dec. 1978).

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