High area capacitor formation using dry etching

Details High area capacitor formation using dry etching High area capacitor formation using dry etching

1991-10-31

1992-10-06

Griffin, Donald

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

437 52, 357 236, H01G 406, H01L 2978, H01L 2170

Patent

active

051538130

ABSTRACT:
The invention provides a method of increasing the capacitance of a capacitor which comprises forming a capacitor having a main vertical trench and one or more lateral trenches extending off the main vertical trench. The capacitor has alternating first and second silicon regions, for example n-doped and p-doped silicon regions. After a main vertical trench is dry etched through the first and second silicon regions, the etch characteristics of the alternating first and second silicon regions are utilized to selectively dry etch lateral trenches, thereby increasing the surface area of the capacitor and the capacitance of the capacitor. Capacitors produced by this method are also provided.

REFERENCES:
patent: 4475982 (1984-10-01), Lai et al.
patent: 4601778 (1986-07-01), Robb
patent: 4853348 (1989-08-01), Tsubouchi et al.
patent: 4906590 (1990-03-01), Kanetaki et al.
patent: 4943344 (1990-07-01), Tachi et al.
patent: 5095346 (1992-03-01), Bae et al.
patent: 5102817 (1992-04-01), Chatterjee et al.
P. M. Schaible and G. C. Schwartz, IBM Technical Disclosure Bulletin, vol. 22, No. 5, p. 1819 (Oct. 1979).
P. M. Schaible and G. C. Schwartz, IBM Technical Disclosure Bulletin, vol. 21, No. 7, pp. 2814-2815 (Dec. 1978).

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