High accuracy adaptive programming

Details High accuracy adaptive programming High accuracy adaptive programming

2007-03-16

2010-11-16

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170

Reexamination Certificate

active

07835189

ABSTRACT:
Flash memory devices have a plurality of memory cells that can be erased and programmed. Performing a voltage verification check allows a for an appropriate state-change voltage to be applied to the flash memory device. The appropriate state-change voltage is determined though accessing a look-up table. Using an appropriate state-change voltage allows a cell to operate with more overall programming cycles.

REFERENCES:
patent: 2005/0083735 (2005-04-01), Chen et al.

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