HIGFET and method

Details HIGFET and method HIGFET and method

1995-06-02

1997-03-25

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257346, H01L 310328, H01L 310336, H01L 2976

Patent

active

056147392

ABSTRACT:
A HIGFET (10) utilizes an etch stop layer (17) to form a gate insulator (16) to be narrower than the gate electrode (21). This T-shaped gate structure facilitates forming source (23) and drain (24) regions that are separated from the gate insulator (16) by a distance (22) in order to reduce leakage current and increase the breakdown voltage.

REFERENCES:
patent: 4916498 (1990-04-01), Berenz
patent: 5514891 (1996-05-01), Abrokwah et al.

Affiliated with

Also associated with

Rating

HIGFET and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with HIGFET and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HIGFET and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2205556