Hierarchical DRAM array with grouped I/O lines and high speed se

Static information storage and retrieval – Interconnection arrangements

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365 51, 36518905, 36518907, 365203, 365205, G11C 506, G11C 502, G11C 700, G11C 1140

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active

056383177

ABSTRACT:
A random access memory array architecture including a plurality of arrays or subarrays arranged into rows and columns, a plurality of sense amplifiers between the arrays (2), and grouped input/output (I/O) lines. The I/O path includes main I/O lines (24) coupled to all of the arrays, with orthogonal local I/O lines (20) for a column of arrays plus sub I/O lines (16) orthogonal to the local I/O lines for each group of sense amplifiers in a row of sense amplifiers. A plurality of pass transistor pairs and interconnect transistors are coupled to the sense amplifiers and the local and sub I/O lines. Latches are provided for storing data output from each of the subarrays, and a match comparator is connected to at least two of the latches for providing a signal on a complementary pair of match leads indicative of a comparison of the data in the latches. A true lead of the complementary pair of match leads is precharged high before the comparison while a complement lead of the complementary pair of match leads is precharged low.

REFERENCES:
patent: 4604533 (1986-08-01), Miyamoto et al.
patent: 4700328 (1987-10-01), Burghard
patent: 4791607 (1988-12-01), Igarashi et al.
patent: 4796234 (1989-01-01), Itoh et al.
patent: 4891792 (1990-01-01), Hanamura et al.
patent: 4916666 (1990-04-01), Fukubama et al.
patent: 4920517 (1990-04-01), Yamauchi et al.
patent: 4926382 (1990-05-01), Sakui et al.
patent: 4931994 (1990-06-01), Matsui et al.
patent: 4984196 (1991-01-01), Tran et al.
patent: 5014241 (1991-05-01), Asakura et al.
patent: 5058058 (1991-10-01), Yasuda et al.
patent: 5060230 (1991-10-01), Arimoto et al.
patent: 5134588 (1992-07-01), Kubota et al.
patent: 5136543 (1992-08-01), Matsuda et al.
"A 60-ns 3.3-V-Only 16-Mbit DRAM with Multipurpose Register", Kazutami Arimoto, et al., IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1989, pp. 1184-1190.

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