Hidden zener diode structure in configurable integrated circuit

Details Hidden zener diode structure in configurable integrated circuit Hidden zener diode structure in configurable integrated circuit

1989-06-30

1990-12-18

Mintel, William

357 41, 357 51, 357 48, 357 234, 357 15, 357 43, H01L 2990

Patent

active

049790013

ABSTRACT:
In one embodiment of the invention, a P diffused region, acting as an anode of a zener diode, is formed within an N+ sinker which is part of a vertical transistor in a configurable integrated circuit. This N+ sinker contacts an N+ buried layer or an N+ substrate and provides an exposed contact region for the transistor. Conductivity types may, of course, be opposite to those described in this embodiment. In this way, an additional zener diode is made available to a user without requiring additional die area. Additionally, since the zener diode is not formed from emitter and base regions of a bipolar transistor, the breakdown voltage of the zener diode may be set as desired. By forming a P zener diode anode in all N+ sinkers, or, conversely, forming a N zener cathode in all P+ sinkers, a large number of zener diodes may be made available to a user without adding any die area to the configurable integrated circuit.

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