HgMnCdTe avalanche photodiode

Details HgMnCdTe avalanche photodiode HgMnCdTe avalanche photodiode

1988-08-02

1989-08-29

James, Andrew J.

357 16, 357 61, 357 27, H01L 2722, H01L 2714, H01L 29223

Patent

active

048622362

ABSTRACT:
A semiconducting photodiode for detecting light at a predetermined wavelength includes a first semiconducing region having a first conductivity type which is a quaternary alloy of Hg, Mn, Cd, and Te. A second semiconducting region having a second conductivity type electrically contacts the first semiconducting region, such that a semiconducting junction is formed between the first and second regions. The relative proportions of Hg, Mn, and Cd in the first region are selected so that the bandgap energy of the first region is approximately equal to the spin orbit splitting energy of the first region at the desired wavelength.

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