HgCdTe S-I-S two color infrared detector

Details HgCdTe S-I-S two color infrared detector HgCdTe S-I-S two color infrared detector

1994-01-11

1994-12-20

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257188, 257440, 257441, 257614, H01L 29161, H01L 2714, H01L 2920

Patent

active

053748417

ABSTRACT:
A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are HgCdTe with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.

REFERENCES:
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patent: 4841351 (1989-06-01), Royer
patent: 4956686 (1990-09-01), Borrello et al.
patent: 5012083 (1991-04-01), Chu
patent: 5068524 (1991-11-01), Elliott et al.
patent: 5144138 (1992-09-01), Kinch et al.
patent: 5149956 (1992-09-01), Norton

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