HGCDTE Photodiode with high speed response

Details HGCDTE Photodiode with high speed response HGCDTE Photodiode with high speed response

1988-04-13

1989-06-20

Hille, Rolf

357 61, 357 16, 357 65, 357 67, 357 71, 357 63, H01L 2714

Patent

active

048413518

ABSTRACT:
The invention relates to a photodiode with high speed response formed in a P type HgCdTe semiconductor substrate. On one face of this invention an N type doped zone is formed. A metallization is in contact with a layer of copper telluride Cu.sub.2 Te, disposed on the other face of the HgCdTe semiconductor substrate, opposite the PN junction. Such a photodiode, sensitive to the near infrared, has a low series resistance which confers thereon a high speed response.

REFERENCES:
patent: Re31968 (1985-08-01), Mickelsen et al.
patent: 3725310 (1973-04-01), Donohue
patent: 3801966 (1974-04-01), Terao
patent: 3978510 (1976-08-01), Kasper et al.
patent: 4319069 (1982-03-01), Tyan
patent: 4357620 (1982-11-01), Wang et al.
patent: 4439912 (1984-04-01), Pollard
Franciosi et al., "Yherbium Monolayer Diffusion Barriers at HG.sub.1-x CD.sub.x Te", Appl. Phys. Lett., 52(18), May 2, 1988, pp. 1490-1492.

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