HgCdTe Bulk doping technique

Details HgCdTe Bulk doping technique HgCdTe Bulk doping technique

1982-04-05

1984-07-31

Rutledge, L. Dewayne

Alloys or metallic compositions

Cadmium base

420526, 420903, 156606, 156DIG72, H01L 320

Patent

active

044629591

ABSTRACT:
Controllable doping of HgCdTe in concentrations low enough to be useful for electronic devices is accomplished by dissolving the desired dopant in mercury at or below the solubility limit. The mercury is then diluted with pure mercury, to lower the dopant concentration to that which will produce the desired impurity concentration in the end product. The doped mercury is then compounded according to conventional methods, to produce reproducibly doped HgCdTe of uniform composition.

REFERENCES:
patent: 3344071 (1967-09-01), Cronin
patent: 3392193 (1968-07-01), Haistey et al.
patent: 3723190 (1973-03-01), Kruse et al.
patent: 4089714 (1978-05-01), Johnson et al.
R. K. Willardson and W. P. Allred, Distribution Coefficients in Gallium Arsenide, 1966, pp. 35-40.
Semiconductors and Semimetals, vol. 18, Chapter 3, Crystal Growth of Cadmium Mercury Telluride by W. F. H. Micklethwaite, 1981.

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