HgCdTe avalanche photodiode

Details HgCdTe avalanche photodiode HgCdTe avalanche photodiode

1987-05-01

1989-01-31

James, Andrew J.

357 52, 357 13, 357 63, 357 61, 357 58, H01L 2714

Patent

active

048019909

ABSTRACT:
An HgCdTe avalanche photodiode for use at ambient temperature comprises an Hg.sub.1-x Cd.sub.x Te crystal substrate in which x is chosen between substantially 0.35 and substantially 0.5, a PN junction is formed in the substrate with low concentrations in the vicinity of the junction, by impurity penetration from a polished and chemically etched surface and the P zone is illuminated. A guard band is provided around the PN junction. The dark current of the photodiode is less than 0.1 .ANG./cm2 at ambient temperature and the excess noise factor is less than 0.4. The photodiode of the invention is used for detecting signals transmitted along fluorated glass optical fibers, for example.

REFERENCES:
patent: 4137544 (1979-01-01), Koehler
patent: 4208003 (1980-06-01), Koehler
Alabedra et al., "An Hg.sub.0.3 Cd.sub.0.7 Te Avalanche Photodiode for Optical-Fiber Transmission Systems at .lambda.=1.3 .mu.m," IEEE Trans. on Elect. Devices, ED-32, (1985), Jul., No. 7, pp. 1302-1306.
Tredwell, "(Hg,Cd)Te Photodiodes for Detection of Two-Micrometer Infrared Radiation," Optical Engineering, May-Jun. 1977, vol. 16, No. 3, pp. 237-240.
Shin et al., "High Performance Epitaxial HgCdTe Photodiodes for 2.7 .mu.m Applications," IEEE Electron Device Letters, vol. EDL-2, No. 7, Jul. 1981, pp. 177-179.
Marine et al., "Infrared Photovoltaic Detectors from Ion-Implanted Cd.sub.x Hg.sub.1-x Te," Appl. Phys. Lett., vol. 23, No. 8, Oct. 15, 1973, pp. 450-452.

Affiliated with

Also associated with

Rating

HgCdTe avalanche photodiode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with HgCdTe avalanche photodiode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and HgCdTe avalanche photodiode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-180782