HF vapor surface treatment for the 03 teos gap filling depositio

Details HF vapor surface treatment for the 03 teos gap filling depositio HF vapor surface treatment for the 03 teos gap filling depositio

1995-05-25

1996-02-06

Quach, T. N.

Fishing, trapping, and vermin destroying

437238, 148DIG17, 134 11, H01L 21283, H01L 2131

Patent

active

054895537

ABSTRACT:
An improved method of gap filling in the dielectric layer using an HF surface treatment is described. Semiconductor device structures are provided in and on a semiconductor substrate wherein the top surfaces of the semiconductor device structures are planarized. A conducting layer is deposited overlying the planarized surface of the semiconductor substrate and patterned. A first oxide layer is conformally deposited over the surfaces of the patterned conducting layer wherein a gap remains between portions of the first oxide layer covering the patterned conducting layer. The surface of the first oxide layer is treated with HF vapor whereby SiOF molecules are formed on the surface of the first oxide layer. A second oxide layer is deposited over the first oxide layer wherein the presence of the SiOF molecules improves the step coverage of the second oxide layer so that the gap is filled by the second oxide layer.

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