HF-control SCR switch structure

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode

Reexamination Certificate

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C257S173000, C257S174000, C257S355000, C257S356000, C257S358000

Reexamination Certificate

active

10963384

ABSTRACT:
A vertical SCR-type switch including a control area having a first control region forming a first diode with a first neighboring region or layer, and a second control region forming a second diode with a second neighboring region or layer. A contact is formed on each of the first and second control regions and on each of the first and second neighboring regions or layers. The contacts are connected to terminals of application of an A.C. control voltage so that, when an A.C. voltage is applied, each of the two diodes is alternately conductive.

REFERENCES:
patent: 3140963 (1964-07-01), Sevedberg
patent: 5898205 (1999-04-01), Lee
patent: 6323718 (2001-11-01), Rault et al.
French Search Report from corresponding French National Application No. 03.50703, filed Oct. 17, 2003.
Patent Abstracts of Japan vol. 007, No. 247 (E-208), Nov. 2, 1983 & JP 58 134471 A (Mitsubishi Denki KK).

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