Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1980-03-18
1982-07-06
Tokar, Michael J.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330285, H03F 316
Patent
active
043385729
ABSTRACT:
A high frequency input signal is applied to one gate of a dual gate MES or MIS field effect transistor. A high gain control voltage is applied to the second gate. To reduce the steepness of the main control slope in the pinch-off voltage region of the transistor a diode combination is connected between the second gate and a node of the amplifier circuit which has a fixed potential lying within the gain control voltage range. The conductive threshold of the diode combination is selected such that the combination becomes conductive when the gate control voltage is sufficient to initiate pinch off of the field effect transistor. The diode combination suitably may comprise a forward conduction diode connected a series opposed polarity with a zener diode or, alternatively, may comprise a series chain of forward conduction diodes.
REFERENCES:
patent: 4179668 (1979-12-01), Schurmann
patent: 4275361 (1981-06-01), Schurmann
Honeycutt Gary C.
Merrett N. Rhys
Sharp Melvin
Texas Instruments Deutschland GmbH
Tokar Michael J.
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