HF-amplifier circuit

Amplifiers – With semiconductor amplifying device – Including field effect transistor

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Details

330296, 357 15, 357 23, H03F 316

Patent

active

041796683

ABSTRACT:
A high frequency amplifier circuit comprising a gated field effect transistor operated in common gate configuration with one of the two gate electrodes connected to the substrate of the field effect transistor. Transistors using two insulated gates or having one insulated gate and either a Schottky barrier junction or a pn junction gate may be used. AGC amplifier and mixer circuit configurations are described. By use of the basic configuration described, high frequency stability of the amplifier is significantly improved.

REFERENCES:
patent: 3391354 (1968-07-01), Ohashi et al.
patent: 3872491 (1975-03-01), Hanson et al.
patent: 3917964 (1975-11-01), Carlson
patent: 3955154 (1976-05-01), Sasaki et al.

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