Hexagonal silicon carbide platelets and preforms and methods for

Details Hexagonal silicon carbide platelets and preforms and methods for Hexagonal silicon carbide platelets and preforms and methods for

1988-04-22

1991-03-26

Chaudhuri, Olik

Compositions: ceramic

Ceramic compositions

Carbide or oxycarbide containing

423345, 156603, 156DIG64, 252 623C, C04B 3552

Patent

active

050029053

ABSTRACT:
Crystalline silicon carbide wherein at least 90 weight percent of the silicon carbide is formed from a plurality of hexagonal crystal lattices wherein at least 80 weight percent of the crystals formed from the lattices contain at least a portion of opposing parallel base faces separated by a distance of from 0.5 to 20 microns. The crystals may be in the form of separate particles, e.g. separate platelets, or may comprise an intergrown structure. The crystalline silicon carbide of the invention is produced by heating a porous alpha silicon carbide precursor composition comprising silicon and carbon in intimate contact to a temperature of from 2100.degree. C. to 2500.degree. C. in a non-reactive atmosphere. The materials are high performance materials finding use in reinforcing, high temperature thermal insulating, improvement of thermal shock resistance, and modification of electrical properties.

REFERENCES:
patent: Re26941 (1970-08-01), Lowe
patent: 2729542 (1956-01-01), VanderPyl
patent: 3025192 (1962-03-01), Lowe
patent: 3147159 (1964-09-01), Lowe
patent: 3409402 (1968-11-01), Addamiano
patent: 3520740 (1970-07-01), Addaminano
patent: 3615930 (1971-10-01), Knippenberg et al.
patent: 3661662 (1972-05-01), Allen
patent: 3754076 (1973-08-01), Cutler
patent: 3933984 (1976-01-01), Kimura et al.
patent: 3956032 (1976-05-01), Powell et al.
patent: 3960619 (1976-06-01), Seiter
patent: 3962406 (1976-06-01), Knippenberg et al.
patent: 4041117 (1977-08-01), Prochazka
patent: 4147572 (1979-04-01), Vodakov et al.
patent: 4162167 (1979-07-01), Enomoto et al.
patent: 4209474 (1980-06-01), Prochazka
patent: 4230497 (1980-10-01), Schwetz et al.
patent: 4238434 (1980-12-01), Enomolo et al.
patent: 4284612 (1981-08-01), Horne, Jr. et al.
patent: 4292276 (1981-09-01), Enomoto et al.
patent: 4314852 (1982-02-01), Brennan et al.
patent: 4556436 (1985-12-01), Addamiano
patent: 4710480 (1987-12-01), Buschmann et al.
patent: 4756895 (1988-07-01), Buecker et al.
patent: 4777152 (1988-10-01), Tsukada
Journal of the Electrochemical Society, vol. 106, No. 6, Jun. 1959, pp. 526-527, Smith, Formation of Silicon Carbide Crystallites.
Handbook of Chemistry and Physics, Hodgman et al., 43rd Ed., pp. 526-527.
"Phase Transformation and Grain Growth in Silicon Carbide Powders", Int. J. High Technology Ceramics, 2, (1986), pp. 99-113--Published 8/14/86, Kistler et al.
Philips Research Reports, Growth Phenomena in Silicon Carbide, Knippenberg, Jun. 1963, vol. 18, No. 3, pp. 230, 231 and 271.
Journal of Crystal Growth, vol. 8, 1971, Phase Transformations, Habit Changes and Crystal Growth in SiC, Bootsma et al., pp. 341-353.

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