Heterostructure with rear-face donor doping

Details Heterostructure with rear-face donor doping Heterostructure with rear-face donor doping

2008-07-01

2008-07-01

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S094000, C257S280000, C257SE33005, C257SE33068

Reexamination Certificate

active

11324601

ABSTRACT:
The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated.

REFERENCES:
patent: 6429467 (2002-08-01), Ando
patent: 6515313 (2003-02-01), Ibbetson et al.
patent: 6727531 (2004-04-01), Redwing et al.
patent: 7268375 (2007-09-01), Shur et al.
patent: 2002/0190259 (2002-12-01), Goetz et al.
patent: 2006/0102929 (2006-05-01), Okamoto et al.

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