Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Patent
1996-12-17
1999-09-21
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
257185, 257191, 257196, 257 26, 257442, 257443, 257449, 136244, 136255, 136259, 136260, 136261, 136262, 136264, 136265, H01L 3106, H01L 31058, H01L 310328, H01L 3110
Patent
active
059557729
ABSTRACT:
A heterostructure thermionic cooler and a method for making thermionic coolers, employing a barrier layer of varying conduction bandedge for n-type material, or varying valence bandedge for p-type material, that is placed between two layers of material. The barrier layer has a high enough barrier for the cold side to only allow "hot" electrons, or electrons of high enough energy, across the barrier. The barrier layer is constructed to have an internal electric field such that the electrons that make it over the initial barrier are assisted in travel to the anode. Once electrons drop to the energy level of the anode, they lose energy to the lattice, thus heating the lattice at the anode. The barrier height of the barrier layer is high enough to prevent the electrons from traveling in the reverse direction.
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Bowers John E.
Shakouri Ali
Guay John
The Regents of the University of California
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