Coherent light generators – Particular active media – Semiconductor
Patent
1987-02-11
1988-12-13
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 48, H01S 319
Patent
active
047916354
ABSTRACT:
The invention relates to a heterostructure semiconductor laser diode with a layer sequence formed on a substrate, wherein the layer sequence includes a laser-active zone arranged between layers of respectively opposite conductivity types, and an additional layer and having a cover layer disposed thereon, and both of the same conductivity type as the substrate, formed on the side of the layer sequence facing away from the substrate, and wherein the cover layer includes an oppositely doped semiconductor area which, in a stripe-shaped surface region extending perpendicularly to the exit surface of the laser radiation in the area of the axis of symmetry, and through a v-groove-shaped recess penetrates, the boundary plane between the cover layer and the adjacent additional layer and extends into the layer located thereunder, whereby the current flowing in the forward direction of the semiconductor laser diode is confined to a narrow, strip-shaped area of the laser-active zone. Higher output power and greater long-term stability are attained by the v-groove-shaped recess being made shorter in its longitudinal dimensions than the resonator length and by the laser-active zone being simultaneously highly doped.
REFERENCES:
patent: 4371966 (1983-02-01), Scifres et al.
Claus Wolk et al., Criteria for Designing V-Groove Lasers, IEEE Journal of Quantum Electronics, vol. QE-17, No. 5, May 1981, pp. 756-759 and 759-762.
Gerner Jochen
Schairer Werner
Davie James W.
Telefunken electronic GmbH
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