Heterostructure semiconductor laser diode

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 48, 372 49, 357 16, 357 17, H01S 319

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active

047962682

ABSTRACT:
A heterostructure semiconductor laser diode with a sequence of layers, formed on a substrate, including a laser-active layer arranged between enclosing layers of opposite respectively conductivity types, a cover layer disposed on the side of the sequence of layers facing away from the substrate, and a layer of a conductivity type opposite to that of the substrate arranged between the substrate and the lower enclosing layer and having in the area of the plane of symmetry, a narrow strip produced by diffusion which has the same conductivity type as the substrate and penetrates into the area of the substrate. The current flowing in the forward direction of the semiconductor laser diode is thereby restricted to a narrow strip-shaped area of the laser-active layer.

REFERENCES:
patent: 4625223 (1986-11-01), Komatsubara et al.
patent: 4701926 (1987-10-01), Seiwa et al.
Claus Wolk et al., Criteria for Designing V-Groove Lasers, IEEE Journal of Quantum Electronics, vol. QE-17, No. 5, May 1981, pp. 756-759 and 759-762.

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