Heterostructure semiconductor laser

Details Heterostructure semiconductor laser Heterostructure semiconductor laser

1987-05-11

1988-11-15

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

047854570

ABSTRACT:
The crystallographic plane-dependent, amphoteric nature of Si-doped AlGaAs is used to provide a low threshold semiconductor laser. An active layer of AlGaAs is sandwiched between an injection layer and a current confining layer of AlGaAs. The injection layer is doped to be n-type conductivity. The confining layer is amphoterically doped with Si to be n-type in a (100) plane and p-type in a (111)A plane. The resulting p-n junctions, heterostructure, and geometry provide the current and the optical confinement for the semiconductor laser.

REFERENCES:
patent: 4392227 (1983-07-01), Itoh et al.
patent: 4456999 (1984-06-01), Sugino et al.
patent: 4599787 (1986-07-01), Sasatani
Ballingall, et al., "Crystal Orientation Dependence of Silicon . . . ", Appl. Phys. Lett., vol. 41, p. 947, Nov. 15, 1982.
Wang, et al., "Crystal Orientation Dependence of Silicon Doping in . . . ", Appl. Phys. Lett., vol. 47, p. 826, Oct. 15, 1985.
Z. Rav-Noy, et al., "Vertical Field-Effect Transistors in III-V Semiconductors", Appl. Phys. Lett., vol. 45, p. 258, Aug. 1, 1984.
Miller, "Lateral p-n Junction Formation in GaAs Molecular . . . ", Appl. Phys. Lett., vol. 47, p. 1309, Dec. 15, 1985.
Miller, "Summary Abstract: Lateral p-n Junction Formation in GaAs . . . ", J. Vac. Sci. Technol., vol. B4, p. 655, Mar./Apr. 1986.

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