Heterostructure semiconductor device

Details Heterostructure semiconductor device Heterostructure semiconductor device

2005-01-11

2005-01-11

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000

Reexamination Certificate

active

06841809

ABSTRACT:
A heterostructure semiconductor device that includes a composite layer between an active layer and a gate. The composite layer includes a strain matching layer and a barrier layer. The strain matching layer reduces the strain between the barrier layer and the active layer. The device can incorporate various additional layers as well as gate and/or contact configurations to obtain desired device performance characteristics.

REFERENCES:
patent: 5851905 (1998-12-01), McIntosh et al.
patent: 5981977 (1999-11-01), Furukawa et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6359292 (2002-03-01), Sugawara et al.
patent: 20020171405 (2002-11-01), Watanabe
patent: 20040061129 (2004-04-01), Saxler et al.
“Ferroelectric Semiconductors,” V. M. Fridkin, Russia (1976), p. 90 (pp. 64-65 in English version).
“High Pinch-off Voltage AlGaN-GaN Heterostructure Field Effect Transistor,” M. S. Shur et al., Proceedings of ISDRS-97, Charlottesville, VA, Dec. 1997, pp. 377-380.
“Optoelectronic GaN-Based Field Effect Transistors,” M. S. Shur et al., SPIE vol. 2397, pp. 294-303.
“Current/Voltage Characteristic Collapse in AlGaN/GaN Heterostructure Insulated Gate Field Effect Transistors at High Drain Bias,” M. A. Khan et al., Electronic Letters, vol. 30, No. 25, Dec. 8, 1994, pp. 2175-2176.
“High-Power Microwave GaN/AlGaN HEMT's on Semi-Insulating Silicon Carbide Substrates,” S. T. Sheppard et al., IEEE Electron Device Letters, vol. 20, No. 4, Apr. 1999, pp. 161-163.
“High Performance Microwave Power GaN/AlGaN MODFETs Grown By RF-Assisted MBE,” N.X. Nguyen et al., Electronics Letters, vol. 36, No. 5, Mar. 2, 2000, pp. 468-469.
“High Electron Mobility Transistor Based on a GaN-AlxGa1-xN Heterojunction,” M. Asif Khan et al., Applied Physics Letters, vol. 63, No. 9, Aug. 30, 1993, pp. 1214-1215.
“AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor,” M. Asif Khan et al., IEEE Electron Device Letters, vol. 21, No. 2, Feb. 2000, pp. 63-65.
“AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates,” M. Asif Khan et al., Applied Physics Letters, vol. 77, No. 9, Aug. 28, 2000, pp. 1339-1341.
“Si3N4/AlGaN/GaN—Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors,” X. Hu et al., Applied Physics Letters, vol. 79, No. 17, Oct. 22, 2001, pp. 2832-2834.
“Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications,” M. Asif Khan et al., IEEE Transactions On Microwave Theory and Techniques, vol. 51, No. 2, Feb. 2003, pp. 624-633.
“Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors,” S. L. Rumyantsev et al., Journal of Applied Physics, vol. 90, No. 1, Jul. 1, 2001, pp. 310-314.
“Induced Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure Field-Effect Transistors,” G. Simin et al., American Institute of Physics, Applied Physics Letters, vol. 79, No. 16, Oct. 15, 2001, pp. 2651-2653.
“Elastic Strain Relaxation and Piezoeffect in GaN-AlN, GaN-AlGaN and GaN-lnGaN Superlattices,” A.D. Bykhovski et al., Journal of Applied Physics, vol. 81, No. 9, May 1, 1997, pp. 6332-6338.
“Two Dimensional Electron Gas Enhancement in AlGaN/GaN/InGaN/GaN Quantum Well Structures,” A. D. Bykhovski et al., Proceedings of 1999 International Device Research Symposium (ISDRS-99), ISBN 1-880920-06-9, pp. 307-310 (1999).
“Novel AlN/GaN Insulated Gate Heterostructure Field Effect Transistor with Modulation Doping and One-Dimensional Simulation of Charge Control,” Syunji Imanaga et al., Journal of Applied Physics, vol. 82, No. 11, Dec. 1, 1997, pp. 5843-5858.
“Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect,” Narihiko Maeda et al., Japanese Journal of Applied Physics, vol. 38, Part 2, No. 7B, Jul. 15, 1999, pp. L799-L801.
“AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor,” Grigory Simin et al., The Japan Society of Applied Physics, Japanese Journal of Applied Physics, vol. 40, Part 2, No. 11A, Nov. 1, 2001, pp. L1142-L1144.
“Low Frequency Noise in AlGaN/lnGaN/GaN Double Heterostructure Field Effect Transistors,” N. Pala et al., Solid-State Electronics 47 (2003), pp. 1099-1104.
“Low-Frequency Noise in GaN-Based Field Effect Transistors,” M. E. Levinshtein et al., Noise and Fluctuations in Control in Electronic Devices, Chapter 4, 2002, pp. 49-65.
“Energy Band/Lattice Mismatch Engineering in Quaternary AllnGaN/GaN Heterostructure,” M. Asif Khan et al., Phys. Stat, Sol. (a) 176, 227 (1999), pp. 227-230.
“Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers,” J. Zhang et al., Applied Physics Letters, vol. 79, No. 7, Aug. 13, 2001, pp. 925-927.
“Piezoelectric Doping and Elastic Strain Relaxation in AlGaN-GaN Heterostructure Field Effect Transistors,” A. D. Bykhovski et al., Applied Physics Letters, vol. 73, No. 24, Dec. 14, 1998, pp. 3577-3579.
“Piezoelectric Doping in AlInGaN/GaN Heterostructures,” M. Asif Khan et al., Applied Physics Letters, vol. 75, No. 18, Nov. 1, 1999, pp. 2806-2808.
“III-Nitride, SiC and Diamond Materials for Electronic Devices,” D. Kurt Gaskill et al., Materials Research Society Symposium Proceedings vol. 423, 1996, pp. 75-79.
“Pyroelectric and Piezoelectric Properties of GaN-Based Materials,” M. S. Shur et al., MRS Internet J. Nitride Semicond. Res. 4S1, G1.6 (1999) pp. 1-12.
“Electron Transport in Wurtzite Indium Nitride,” O'Leary et al., Journal of Applied Physics, vol. 83, No. 2, Jan. 15, 1998, pp. 826-829.
“Piezoeffect and Gate Current in AlGaN/GaN High Electron Mobility Transistors,” R. Gaska et al., Applied Physics Letters, vol. 71, No. 25, Dec. 22, 1997, pp. 3673-3675.
“Two-Dimensional Electron-Gas Density in AlxGa1-xN/GaN Heterostructure Field-Effect Transistors,” N. Maeda et al., Applied Physics Letters, vol. 73, No. 13, Sep. 28, 1998, pp. 1856-1858.
“Piezoelectric Charge Densities in AlGaN/GaN HFETs,” P.M. Asbeck et al., Electronics Letters, vol. 33, No. 14, Jul. 3, 1997, pp. 1230-1231.
“Spontaneous Polarization and Piezoelectric Constants of III-V Nitrides,” Bernardini et al., Physical Review B, vol. 56, No. 16, Oct. 15, 1997-II, pp. R10024-R10027.
“GaAs Devices and Circuits,” M. S. Shur, Microdevices Physics and Fabrication Technologies, Plenum Publishing Corporation, New York (1987) p. 410.
“The Influence of the Strain-Induced Electric Field on the Charge Distribution in GaN-AlN-GaN Structure,” Bykhovski et al., Journal of Applied Physics, vol. 74, No. 11, Dec. 1, 1993, pp. 6734-6739.
“Pyroelectricity in Gallium Nitride Thin Films,” Bykhovski et al., Applied Physics Letters, vol. 69, No. 21, Nov. 18, 1996, pp. 3254-3256.
“Lattice and Energy Band Engineering in AlInGaN/GaN Heterostructures,” M. Asif Khan et al., Applied Physics Letters, vol. 76, No. 9, Feb. 28, 2000, pp. 1161-1163.
“Electron Mobility in Modulation-Doped AlGaN-GaN Heterostructures,” R. Gaska et al., Applied Physics Letters, vol. 74, No. 2, Jan. 11, 1999, pp. 287-289.

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