Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2006-08-04
2009-11-24
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S024000, C257S900000, C257S142000, C257S261000, C438S302000, C423S447300, C423S447500
Reexamination Certificate
active
07622732
ABSTRACT:
Heterostructure devices incorporate carbon nanotube technology to implement rectifying devices including diodes, rectifiers, silicon-controlled rectifiers, varistors, and thyristors. In a specific implementation, a rectifying device includes carbon nanotube and nanowire elements. The carbon nanotubes may be single-walled carbon nanotubes. The devices may be formed using parallel pores of a porous structure. The porous structure may be anodized aluminum oxide or another material. A device of the invention may be especially suited for high power applications.
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Rao Steven H
Weiss Howard
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