Heterostructure laser with lattice mismatch

Details Heterostructure laser with lattice mismatch Heterostructure laser with lattice mismatch

1991-01-04

1991-09-10

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 4, 357 16, 357 17, H01S 319, H01L 3300

Patent

active

050480367

ABSTRACT:
Semiconductor heterostructure lasers having at least one lattice mismatched strain layer in the cladding proximate to the active region. Indium or phosphorus may be added in high concentration to form the strain layers. The strain layers may be spaced somewhat apart from the active region or may be adjacent to the active region. In either case, the strain layers decrease transparency current and increase differential gain.

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