Heterostructure laser having a stripe region defined in an activ

Oscillators – Molecular or particle resonant type

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357 18, H01S 319

Patent

active

041059557

ABSTRACT:
In an active layer restricted by a pair of heterojunctions in a semiconductor laser, a stripe region and a contiguous region are made to have a difference in kinds and/or concentrations of impurity to give the stripe region a higher dielectric constant, preferably by about 0.01-1%, than the contiguous region whereby transverse laser oscillation confined to the active layer by the heterojunctions is further confined to the stripe region in a width direction parallel to the heterojunctions. The dielectric constant profile established in the active layer stabilizes the transverse mode and eliminates nonlinearities in the laser output - exciting current curve as well as other undesirable performance characteristics that are exhibited in conventional stripe-geometry lasers. The difference in the impurity gives the stripe region a narrower band gap of from about 5 to about 100 meV than the contiguous region. For a laser of III-V-Group semiconductor materials, the difference is achieved by doping these regions with an n-type and/or a p-type impurity. The stripe width may be between about 1 micron and several tens of microns. The laser stably produces a single-mode optical output of 10 and 30 mW or more in CW and pulsed operation, respectively.

REFERENCES:
patent: 3783351 (1974-01-01), Tsukada et al.
patent: 3790902 (1974-02-01), Miller
patent: 3993964 (1976-11-01), Yonezu
patent: 4002997 (1977-01-01), Thompson
M. Takusagawa et al., "A New Stripe-Geometry Double Hetrojunction Laser with Internally Striped Planar (ISP) Structure" Conference; 1973 International Electron Devices Meeting, Technical Digest, Washington, D.C. USA, (3-5 Dec. 1973), pp. 327-329.

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