Heterostructure laser

Details Heterostructure laser Heterostructure laser

1986-06-20

1988-11-29

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 357 4, 372 46, H01S 319, H01L 2712

Patent

active

047886889

ABSTRACT:
A semiconductor laser of the heterostructure type is grown on a p-type substrate and has a plurality of p-type active layers. In a preferred embodiment, the active layers are grown by liquid phase epitaxy from a single melt which is maintained just below its equilibrium temperature and is cooled very slowly during deposition. As a result, the active layers are substantially identical in composition and have a very low lattice mismatch. They emit light at characteristic wavelengths within 50 angstroms of each other, indicating that their modal gain envelopes coincide. This condition minimizes the threshold current.

REFERENCES:
patent: 4599728 (1986-07-01), Alavi et al.
Yano et al., Appl, Phys. Lett. 41 (5) 390 (1982).
Yano et al., IEEE Journal of Quantum Electronics, QE-19 No. 8, 1319 (1983).

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