Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-11-15
2010-11-23
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S045010, C359S344000
Reexamination Certificate
active
07839909
ABSTRACT:
The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhigh-speed computing and switching systems, in development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for pumping solid-state and fiber lasers and amplifiers. The heterostructure, the injection laser, the semiconductor amplifying element, and the semiconductor optical amplifier are proposed, the essential distinction of which consists in modernization of the active region and the leak-in region of the heterostructure, combined choice of location, compositions, refractive indices and thicknesses of the heterostructure layers providing the efficient functioning of the injection lasers, the semiconductor amplifying elements and the semiconductor optical amplifiers in the transient region of formation of controllable emission leak from the active layer.
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P.G. Eliseev, et al., Semiconductor Lasers, Kvantovaya Electronica, 24. No. 12, 1997, pp. 1067, 1073, 1074, and 1079.
General Nano Optics Limited
Haynes and Boone LLP
Niu Xnning
Pogodin Pavel I.
Rodriguez Armando
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