Heterostructure III-V nitride semiconductor device including InP

Details Heterostructure III-V nitride semiconductor device including InP Heterostructure III-V nitride semiconductor device including InP

1997-02-13

1998-10-20

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257103, 257615, 257628, H01L 3300

Patent

active

058250530

ABSTRACT:
In a heterostructure III-V nitride semiconductor device, an InP substrate has a surface having a sloped angle of 0.degree. to 16.degree. with respect to a (100) surface thereof. At least one GaN layer is formed on the InP substrate.

REFERENCES:
patent: 5652762 (1997-07-01), Otsuka et al.
Nakamura, "InGaN/AlGaN blue-light-emitting diodes", J. Vac. Sci. Technol. A 13(3), PP. 705-710, May/Jun. 1995.

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