Heterostructure field-effect transistors (HFETs') with high modu

Details Heterostructure field-effect transistors (HFETs') with high modu Heterostructure field-effect transistors (HFETs') with high modu

1998-04-27

2000-01-18

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 19, 257 20, 257 24, H01L 29778

Patent

active

060159812

ABSTRACT:
The invention concerns heterostructure field effect transistors (HFET's) with high charge carrier concentration in the two-dimensional charge-carrier gas. The n-HFET of the heterostructure layer sequence contains several zones with formed 2DEG while the p-HFET contains several zones with formed 2DHG, which can be gate-controlled with a transistor gate, without mutually screening each other. At the same time, more charge carriers n.sub.s with high mobility are available through several channels. Higher transconductances for transistors are obtained with this, resulting in the promise of shorter switching times, especially for integrated circuits. In addition, other characteristics that are critical for the high-frequency technology, such as transit frequency and maximum operating frequency, can also be increased.

REFERENCES:
patent: Re33693 (1991-09-01), Bean et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4710788 (1987-12-01), Dambkes et al.
patent: 4797716 (1989-01-01), Chaffin et al.
patent: 5258632 (1993-11-01), Sawada
Ismail, et al., "High-Performance Si/SiGe n-Type Modulation-Doped Transistors," IEEE Electron. Device Lett., vol. 14, No. 7, Jul. 1993, pp. 348-350.
Mark C. Foisy et al., "The Role of Inefficient Charge Modulation in Limiting the Current-Gain Cutoff Frequency of the MODFET", IEEE Transactions on Electron Devices, vol. 35. No. 7, Jul. 1988, pp. 871-878.
T.P. Pearsall et al., "Ge.sub.x Si.sub.1-x Modulation-Doped p-Channel Field-Effect Transistors", Proceedings of the 1.sup.st International Symposium On Silicon MBE, vol. 85-7 May 1985, pp. 400-405.
Nawaz, Muhammad, Jensen, Geir U.: Design of Active Phase Shifters Based on Multichannel Heterojunction Field Effect Transistors (MCHFET's). In: IEEE Transactions on Electron Devices, vol. 43, No. 11, Nov. 1996.
Shealy, J.B. et al.: High-Performance Submicrometer Gate length GaInAs/InP Composite Channel HEMT's with Regrown Ohmic Contacts. In: IEEE Electron Device Letters, vol. 17, No. 11, Nov. 1996.
O'Neill, A.G., Antoniadis, D.A.: Deep Submicron CMOS Based on Silicon Germanium Technology. In: IEEE Transactions on Electron Devices, vol. 43, No. 6, Jun. 1996.
Chertouk, M. et al.: Metamorphic InA1AS/InGaAs HEMT's on GaAs Substrates with an Novel Compossite Channels Design. In: IEEE Electron Device Letters, vol. 17, No. 6, Jun. 1996.

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