Heterostructure field effect transistor including a pulse doped

Details Heterostructure field effect transistor including a pulse doped Heterostructure field effect transistor including a pulse doped

1994-06-08

1995-11-07

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, H01L 29784, H01L 29812, H01L 2980

Patent

active

054649951

ABSTRACT:
The present invention relates to a heterostructure yield effect transistor with high charge carrier mobility and velocity wherein the current carrying channel has only a narrow pulse doped region that is disposed on the side of the channel layer opposite the heterojunction. At positive gate voltages the remainders of the doping substance are spatially separated from the free charge carriers so that the free charge carriers exhibit transporting characteristics as they are encountered in the undoped channel but with a substantially higher saturation current.

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