Heterostructure field effect transistor

Details Heterostructure field effect transistor Heterostructure field effect transistor

1990-11-26

1992-02-25

Carroll, J.

357 4, 357 16, H01L 2712, H01L 29161, H01L 2980

Patent

active

050917595

ABSTRACT:
A heterostructure field effect transistor having a buffer layer comprising a first compound semiconductor material. A layer of second semiconductor material different from the first material is formed over the buffer layer. The second layer has a total thickness less than 250 .ANG.. A doped third semiconductor layer formed over the second layer. The net has a dopant concentration in the second layer is greater than the net dopant concentration in the third layer. A gate layer is positioned over the third layer. In a preferred embodiment the second layer is a pulse-doped pseudeomorphic material. There is also provided a method for making the heterostructure field effect transistor. A doped pseudomorphic semiconductor layer of a first conductivity type is formed between first and second other semiconductor layers, the second layer including a net dopant concentration of the first conductivity type. A Schottky gate electrode is formed in contact with the second layer.

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