Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1995-05-04
1997-02-25
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257 27, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
056061846
ABSTRACT:
A complementary III-V heterostructure field effect device includes the same refractory ohmic material for providing the contacts (117, 119), to both the N-type and P-type devices. Furthermore, the refractory ohmic contacts (117, 119) directly contact the InGaAs channel layer (16) to provide improved ohmic contact, despite the fact that the structure incorporates an advantageous high aluminum composition barrier layer (18) and an advantageous GaAs cap layer (20).
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Abrokwah Jonathan K.
Hallmark Jerald A.
Huang Jenn-Hwa
Ooms William J.
Shurboff Carl L.
Bernstein Aaron B.
Chen George C.
Meier Stephen
Motorola Inc.
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