Heterostructure electron emitter utilizing a quantum well

Details Heterostructure electron emitter utilizing a quantum well Heterostructure electron emitter utilizing a quantum well

1994-01-27

1995-08-15

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 14, 257 29, 257245, 257254, H01L 2714, H01L 29161

Patent

active

054421926

ABSTRACT:
A heterostructure electron emitter including a substrate having a surface with a predetermined potential barrier and a quantum well formed in the substrate adjacent the surface. Contacts are positioned on the substrate for coupling free electrons to the substrate and into the quantum well. An acoustic wave device is positioned on the substrate so as to direct acoustic waves to strike the free electrons in the quantum well and excite the free electrons sufficiently to cause the free electrons to overcome the potential barrier and to be emitted from the surface of the substrate.

REFERENCES:
patent: 4893161 (1990-01-01), Tanski et al.
patent: 5159420 (1992-10-01), Grudkowski et al.
patent: 5264717 (1993-11-01), Grudkowski et al.
patent: 5283444 (1994-02-01), Sacks et al.
patent: 5285079 (1994-02-01), Tsukamoto et al.

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