Heterostructure diode injection laser having a constricted activ

Details Heterostructure diode injection laser having a constricted activ Heterostructure diode injection laser having a constricted activ

1977-08-15

1979-08-28

Davie, James W.

Oscillators

Molecular or particle resonant type

357 18, H01S 319

Patent

active

041662539

ABSTRACT:
In a heterostructure diode injection laser, the active layer has a region of relatively lesser thickness in registration with a stripe geometry contact. Increased gain within the region of lesser thickness relative to adjacent regions of greater thickness tends to effectively confine lasing operation to the thinner or constricted region. The dimensions of the constricted active region may be readily selected to discriminate against multifilament lasing modes in order to produce a single spot laser beam over a wide range of injection levels.

REFERENCES:
patent: 3978428 (1976-08-01), Burnham et al.
patent: 4011113 (1977-03-01), Thompson et al.
Aiki, et al., "Channeled-Substrate Planar Structure (AlGa)As Injection Lasers," Applied Physics Letters, vol. 30, No. 12, Jun. 15, 1977, pp. 649-651.
Kirkby, et al., "Channeled Substrate Buried Heterostructure GaAs-(GaAl)As Injection Lasers," J. of Applied Physics, vol. 47, No. 10, Oct. 1976, pp. 4578-4589.

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