Heterostructure bipolar transistor

Details Heterostructure bipolar transistor Heterostructure bipolar transistor

1984-05-08

1986-06-03

Edlow, Martin H.

357 16, 357 89, H01L 2972, H01L 29205

Patent

active

045933057

ABSTRACT:
A heterostructure bipolar transistor has an emitter layer, a base layer and a collector layer, the emitter layer being formed of a semiconductor material whose energy gap is wider than that of the base layer, so that a heterojunction is formed between the emitter layer and the base layer. One of the emitter layer and the base layer has first and second layers which are sequentially formed, and the first layer constituting the heterojunction has a lower impurity concentration than that of the second layer. When the impurity concentration and the thickness of the first layer are defined as N.sub.1 and W.sub.1, respectively, the following relation is satisfied:

REFERENCES:
patent: 3980900 (1976-09-01), Ishigaki et al.
patent: 4302763 (1981-11-01), Ohuchi et al.
H. Kroemer, Proc. IEEE, vol. 70, No. 1, Jan. 1982, pp. 13-25, "Heterostructure Bipolar Transistors and Integrated Circuits".
C. Y. Chen et al., IEDM 81, pp. 267-270, "A Depletion Stop Double Base Phototransistor: A Demonstration of a New Transistor Structure".

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