Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-10-08
1994-05-03
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
2571831, 257222, 257245, 257912, 310313R, H01L 29796, H01L 29205
Patent
active
053090047
ABSTRACT:
A novel heterostructure acoustic charge transport (HACT) device is disclosed which displays both electron and hole transport. The device includes a transducer fabricated on a substrate structure that launches surface acoustic waves. An optional reflector is formed in the substrate structure at an end portion adjacent to the transducer for reflecting the surface acoustic waves. Also included is an electrode configured with the transport channel at an end thereof distal to the transducer for generating electrical signal equivalents of the propagating electrode charge. The device makes use of both the conduction band quantum well to transport electrons and the valance band quantum well to transport holes. In this manner the sampling, processing and detection frequencies of the device can be doubled.
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patent: 4980596 (1990-12-01), Sacks et al.
Kroemer "Heterostructure Device Physics: Band Discontinuities as Device Design Parameters" VLSI Electronics: Microstructure Science vol. 10 (1985) pp. 121-165.
Sze Physics of Semiconductor Devices 2nd Edition John Wiley, N.Y. 1981 pp. 20-23, 122-129.
Negative Charge, Barrier Heights, and the Conduction-Band Discontinuity in Al.sub.x Ga.sub.1-x as Capacitors by Hickmott et al.; pp. 2844-2853 J. Appl. Phys. 57B Apr. 1985.
Munson Gene M.
United Technologies Corporation
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