Heterolithic microwave integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means

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257208, 257275, 257374, 257395, 257396, 257397, 257446, 257458, 438424, 333246, 333247, H01L 2980, H01L 31112

Patent

active

061147168

ABSTRACT:
Silicon conductive vias and pedestals are disclosed for use in microwave integrated circuits. The pedestals are isolated from a ground plane on the bottom surface by glass, while the vias are used to make electrical contact to ground. Electrical circuit elements in the top surface of the integrated circuit are selectively grounded or isolated by the choice of connection to a via or pedestal, respectively.

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U.S. Patent Application No. 08/640,290, Docket No. 16422, Entitled: "Process For Reducing Bond Resistance In Semiconductor Devices And Circuits". Filed Jul. 22, 1996.
"Glass Microwave IC Packaging Technology", Publication Date, May 10, 1994, Presented by Richard Perko, M/A-COM Inc., Electro International 1994, Hynes Convention Center, Boston, MA, May 10-12, 1994, pp. 857-862.
A New Technology For Si Microwave Power Transistor Manufacturing, XP-002053834, Ping Li, Corp. R&D Center, MA-COM, Inc. Lowell, MA 01853, Timothy Boles, Burlington Semiconductor Operation M/A-COM Inc,, Burlington, MA 01803, pp. 103-106, 1996.
Search Document PCT/US 97/03468, pct international application WO 97/35340.

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