Heterojunctional collector-top type bi-polar transistor

Details Heterojunctional collector-top type bi-polar transistor Heterojunctional collector-top type bi-polar transistor

1989-07-05

1990-02-20

Mintel, William

357 34, 357 16, H01L 2972

Patent

active

049031040

ABSTRACT:
A heterojunction type bi-polar transistor which has a heterojunction in the boundary between an intrinsic base region and an external base region to thereby eliminate the periphery effect and accordingly obtain a high current amplification factor.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 4739379 (1988-04-01), Akagi et al.

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