Heterojunction type semiconductor device having ordered phase al

Details Heterojunction type semiconductor device having ordered phase al Heterojunction type semiconductor device having ordered phase al

1995-02-24

1997-03-18

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257200, 372 7, 372 48, H01L 310328, H01S 330, H01S 319

Patent

active

056125500

ABSTRACT:
A heterojunction semiconductor device has a plurality of ordered phase alloy layers. Either the whole or a part of each of the ordered phase alloy layers has a crystal structure (triple-period structure) in which the ordered alloy is of a composition corresponding to the [111]A direction and an anion composition modulation period that is triple that of a disordered structure. The double-period structure may alternatively be used. The triple-period or double-period structure applied to the layer structure of the heterostructure semiconductor device results in a reduction of the bandgap.

REFERENCES:
patent: 4591889 (1986-05-01), Gossard et al.
patent: 5153890 (1992-10-01), Bona et al.
patent: 5455883 (1995-10-01), Shigeta et al.
Gomyo, A., et al., "Observation of a New Ordered Phase in Al.sub.x In.sub.1-x As Alloy and Relation between Ordering Structure and Surface Reconstruction During Molecular-Beam-Epitaxial Growth", Phys. Review Letters, vol. 72, No. 5, 31 Jan. 1994, pp. 673-676.
Petroff, P.M., et al., "Band Gap Modulation in Two Dimensions by MBE Growth of Titled Superlattices and Applications to Quantum Confinement Structures", Journal of Crystal Growth, vol. 95, No. 104, Feb. 1989, pp. 260-265.
Yamamoto, T., et al., "Periodic lateral structure of Al content modulations in AlGaAs grown on vicinal (lll)A GaAs by molecular beam epitaxy", Journal of Cyrstal Growth, vol. 127, No. 1/4, Feb. 1993, pp. 865-870.

Affiliated with

Also associated with

Rating

Heterojunction type semiconductor device having ordered phase al does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterojunction type semiconductor device having ordered phase al, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction type semiconductor device having ordered phase al will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1707979